bandgap
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n.
能带隙；
双语例句
用作名词(n.)
It must lose enough energy to fall past the bandgap into the area where electrons are allowed.
它必须失去足够的能量，属于过去的带隙纳入地方电子获准。
Without changing the period size, the frequency bandgap is varied when the length of the stretching strip is adjusted.
在不改变周期的情况下，通过调整伸长窄带长度可以改变带隙特性频率。
权威例句
A CMOS bandgap reference circuit with sub-1-V operationSubstrate-induced bandgap opening in epitaxial graphene
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Synthetic Principles for Bandgap Control in Linear pi-Conjugated Systems.
Direct observation of a widely tunable bandgap in bilayer graphene.
Efficiency enhancement in low-bandgap polymer solar cells by processing with alkane dithiols
Efficiency enhancement in low-bandgap polymer solar cells by processing with alkane dithiols.
Tandem polymer solar cells featuring a spectrally matched low-bandgap polymer
Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres
Quantum-Sized PbS, CdS, Ag2S, Sb2S3, and Bi2S3 Particles as Sensitizers for Various Nanoporous Wide-Bandgap Semiconductors
1. All the films have the same indirect transition bandgap, but those with one time dip have no indirect transition.
除浸渍一次的膜不存在间接跃迁外，所有的膜具有相同的间接跃迁禁带宽。
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2. A thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.
由于厚膜中存在较强的表面相互作用，厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
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3. Starting from analyzing the general principle of typical bandgap reference circuit, the design of a CMOS bandgap reference circuit with adjustable output is discussed.
从分析典型的能隙基准电路的一般原理入手，重点讨论了一种输出可调节的CMOS能隙基准电路的设计。
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4. Both the optical absorption coefficient and bandgap decrease with increasing in film thickness.
光吸收系数以及禁带宽度均随薄膜厚度的增加而下降。
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5. Bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage.
带隙基准源是集成电路中的重要单元，输出不随温度、电源电压变化的基准电压或电流。
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6. Introduce the characteristics and applications of the wide-bandgap materials.
简要介绍了宽禁带半导体材料的特性与应用。
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7. DGS are widely applied to RF and microwave circuits to improve the performance because of its bandgap characteristic.
缺陷接地结构由于其带阻特性而被广泛地应用到射频微波电路中，以改善电路性能。
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8. At last we make some characteristic waveform about this bandgap voltage reference.
文中最后给出了此基准电压源的各种性能的仿真波形。
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9. Design a bandgap voltage reference circuit and a voltage-modifying circuit to provide precise voltage and current reference for the referred ADC.
设计了基准电压源和电压微调电路，为ADC提供参考电压和电流，而且能进行一定范围内的微调。
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10. The ribbons are narrow enough to have an electronic bandgap and thus switching properties.
这种带足够窄以至于形成电学带隙，从而拥有开关性能。
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11. Besides, the self-stability of the bandgap voltage reference structure makes the UVLO can work stably.
而且带隙基准电压源结构自身的稳定性决定了欠压封锁能够稳定工作。
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12. It is believed that the emission peaks were concerned with impurity level in the bandgap.
变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
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13. A low power CMOS bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.
运用带隙基准的原理，提出了一种带启动电路的低功耗带隙基准电压源电路。
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14. Therefore, we get the bandgap reference voltage with very small temperature coefficient.
由此得到温度系数很小的带隙基准电压。
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15. It has tremendous application prospect with the properties of photonic bandgap, photonic localization and controlling photonic density of state.
由于光子晶体具有光子带隙、光子局域和控制光子态密度等特性，所以它具有广阔的应用前景。
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16. The impurity defects, which caused impurity bands in the bandgap, of natural sphalerite could extend its absorbing range to the visible light wavelength range.
天然闪锌矿晶格中丰富的杂质缺陷在禁带中形成杂质能级，可将闪锌矿对光的响应拓展到可见光的波长范围。
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17. Silicon is an indirect bandgap semiconductor emitting light inefficiently.
硅是间接带隙半导体，不能有效地发光。
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18. The interaction between the energized electron and the hole it leaves behind is called an exciton, and the difference in energy levels between the hole and the electron is known as the bandgap.
这种获得能量的电子和他留在原来能级上对应的位置的空穴的相互作用叫做一个激子激发过程，而这两个不同能级之间的部分被称作带隙。
blog.sina.com.cn
19. A low voltage current mode bandgap voltage reference circuit with a novel start-up circuit is designed.
介绍了一种低压电流模带隙电压基准电路，并提出了一种新颖的启动电路结构。
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20. If the photon energy is greater than the bandgap of the cell material, then electrons are excited into the conduction band.
如果光子的能量高于电池材料的能带，那么电子就被激发到导带中。
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21. It must lose enough energy to fall past the bandgap into the area where electrons are allowed.
它必须失去足够的能量，属于过去的带隙纳入地方电子获准。
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22. A novel super performance CMOS voltage reference circuit was designed based on the theory of bandgap voltage reference.
介绍了带隙基准电压源的基本原理，设计了一种高精度带隙基准电压源电路。
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23. In this paper, ANNs are applied to study of the bandgap characteristic of DGS.
本文针对神经网络在DGS滤波特性中的应用进行了研究。
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24. Design of BVR(bandgap voltage reference) used in the integrated circuit was described.
设计了一种集成电路中带隙电压参考源。
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25. A bandgap voltage reference based on chopper technology was used to enhance the output voltage precision of white-light LED driver.
使用斩波技术，减小了带隙基准源中运放的失调电压所引起的误差，提高了基准源的精度。
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26. The results of study also shown that the biger difference of refractivity between two kinds of materials, the wider of the bandgap for two electromagnetic modes, and easier to produce full bandgap.
另外，研究结果表明组成光子晶体的两种材料的折射率差别越大，两种电磁模的禁带越宽，越容易产生完全光子禁带。
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27. The results of study also shown that the biger difference of refractivity between two kinds of materials, the wider of the bandgap for two electromagnetic modes, and easier to produce full bandgap.
另外，研究结果表明组成光子晶体的两种材料的折射率差别越大，两种电磁模的禁带越宽，越容易产生完全光子禁带。
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28. We used three Dimensional Finite Difference Time Domain Method (FDTD) to calculate photonic cry- stal slab with different refractive index and got the numerical result of the bandgap and analyse it, which may give instruction in designing photonic crystal devices.
利用三维时域有限差分方法计算了具有不同介电常数的光子晶体薄板结构,得到了这些结构的带隙的数值结果,并作了分析; 这些结果对于设计光子晶体器件有着指导作用。
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29. Therefore, we get the bandgap reference voltage with very small temperature coefficient.
由此得到温度系数很小的带隙基准电压。
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30. The bandgap of the double heterostructure was only 0. 86μm, yet up to 1mA of photo-current was detected.
双异质结的带隙仅为0．86μm，迄今探测到的光电达1mA。
-- 来源 -- 英汉 - 辞典例句
31. wide bandgap emitter
宽禁带发射极
-- 来源 -- 英汉 - 翻译参考[网络]
32. low bandgap material
窄带隙材料
-- 来源 -- 英汉 - 翻译参考[网络]
33. wide bandgap semiconductor
宽禁带半导体
-- 来源 -- 英汉 - 翻译参考[网络]
34. In the reflected wave, the reflectivity of forbidden band lowers quickly with the extinction coefficient increment, when the extinction coefficient increases to 0.05, there is already no obvious photonic bandgap.
得出：在反射波中，禁带的反射率随消光系数的增加而迅速降低，当消光系数增加到0.05时，已经不存在明显的能带。
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35. Another good review article on the wide bandgap nitrides.
另一篇不错的宽能隙氮化物系列的论文。
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36. The advantage of electro-absorption as a detector is that it is not necessary to fabricate a localized region of different bandgap.
利用电吸收制作探测器的优点在于不必制备出有不同带隙的局部区域。
-- 来源 -- 英汉 - 辞典例句
bandgap
