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silicon nitride

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silicon nitride是什么意思
英式音标:[ˈsilikən ˈnaitraid]英式读音
美式音标:[ˈsɪlɪkən ˈnaɪˌtraɪd]美式读音
词汇分类:光伏专业英语
词义:

释义

氮化硅;

用法:

权威例句

Silicon Nitride and Related Materials

The hydrogen content of plasma‐deposited silicon nitride

Current Transport and Maximum Dielectric Strength of Silicon Nitride Films

Formation of tough interlocking microstructures in silicon nitride ceramics by dynamic ripening

Role of Microstructure in Hertzian Contact Damage in Silicon Nitride: II, Strength Degradation

Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride.

Formation of Long-Range-Ordered Nanocrystal Superlattices on Silicon Nitride Substrates

Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memory devices

Relationships between processing, microstructure and properties of dense and reaction-bonded silicon nitride

Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge...
造句:

1. The researchers placed a silicon nitride waveguide on a transparent nanoporous silicon oxide substrate that they specially developed to have a much lower refractive index than that of the waveguide.

其做法是在纳米级氧化硅透明衬底上生长氮化硅波导,衬底的折射率远小于波导。

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2. When the team examined what they had done under a microscope, they found that the graphene had wrapped itself around the silicon-nitride grains, forming continuous walls.

当研究小组将合成物放于显微镜下检测时,他们发现石墨烯已完全被氮化硅微粒包裹,形成了一道道连续的“墙壁”。

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3. The result was a composite that was able to withstand twice as much pressure as unalloyed silicon nitride.

结果就是形成一种混合物,可以承受多于没有加入碳单原子层的氮化硅一倍的压力。

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4. They create a series of pores ranging from 5 to 25 nm in diameter by placing flakes of graphene over a silicon nitride membrane and drilling nanosized holes in the graphene using an electron beam.

通过将石墨烯薄片放置在一个氮化硅薄膜上,并用电子束在石墨烯上打出纳米尺度的孔,他们制作出了一系列从5到25nm直径的孔。

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5. The technology procedure of silicon nitride ball is introduced.

介绍了氮化硅球的加工工艺过程。

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6. It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.

它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。

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7. The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.

采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化,使整个器件提高了可靠性。

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8. Lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by PECVD are related to deposition parameters.

大量的实验研究表明,PECVD氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。

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9. The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.

玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。

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10. In the fabrication of solar cell, silicon nitride thin film is used as passivating film and anti-reflecting film.

硅基太阳能电池中,氮化硅用作钝化膜和减反射膜;

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11. In several methods to prepare silicon nitride powder there exist some shortages in the present, so self-propagating high temperature synthesis is developed for fabricating the powder.

现阶段的几种氮化硅粉体的制备方法存在着很多不足,因此采用燃烧合成工艺制备氮化硅粉体。

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12. Its refractive index is higher than that of the traditional optical fiber material, silica, so silicon nitride has good optics confinement property.

其折射率比传统用作光纤的石英的折射率高,对光有较好的约束性能,因此在光波导方面可能会有更好的应用前景。

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13. Sintering AIDS were one of key factors affecting microstructure and properties of silicon nitride ceramics.

烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。

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14. Shock behavior of silicon nitride ceramic was investigated by using a one-stage light gas gun facility.

用一级轻气炮冲击加载装置,对氮化硅陶瓷进行了冲击性能实验研究。

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15. The performance of radome materials are discussed such as microcrystalline glass, slip-cast fused silica, and silicon nitride etc in the paper.

介绍了微晶玻璃、石英陶瓷、氮化硅等几种天线罩材料的性能,重点探讨了可控密度氮化硅陶瓷材料的特点及在导弹天线罩上的应用。

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16. Recently, porous silicon nitride materials have attracted much attention because of their potential applications in high temperature solid base catalyst, sensors and so on.

近年来,多孔氮化硅基材料因为在高温固体碱催化、传感器等领域的潜在应用,而受到广泛的关注。

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17. This paper introduces the experiment condition and process to carry out hot cutting on silicon nitride ceramics materials with new self-made water-plasma arc equipment.

主要阐述了采用自制新型水介质等离子弧设备对氮化硅陶瓷材料进行加热辅助切削的试验条件及过程。

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18. In experiment, a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters.

本实验通过系统地改变沉积参数,在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

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19. This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.

探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。

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20. As a new type tool material, the excellent capabilities of silicon nitride ceramics cutting tools ravel out many cutting problems of super hard materials.

氮化硅陶瓷是一种新型刀具材料,其优良的切削性能解决了超硬材料的加工难题。

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21. The Modutek Nb Series silicon nitride bath is engineered to provide unparalleled process control, safety, and flexibility.

氮化硅蚀刻槽为您提供无与伦比的过程控制、安全性和灵活性。

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22. A systematic study of doping rare earths into the silicon nitride bonded silicon carbide material had done. The results of X-ray diffraction and mechanics properties testing were obtained.

对氮化硅结合碳化硅材料进行了掺入稀土的系统实验,并对产品进行了力学性能测试和X射线衍射测试。

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23. In the third chapter, results and discussions of substrate transfer of thick silicon nitride film were elaborated.

第三章为多孔硅表面氮化硅的淀积与转移技术的结果与讨论。

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24. Some types of oxynitride glass concerned with silicon nitride are studied in the present paper.

本文分析了几种与氮化硅有关的氧氮化物玻璃的形成范围及其网络结构特征。

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25. Silicon nitride ceramic is a kind of fairly good material for rolling bearings.

氮化硅陶瓷是一种较好的滚动轴承材料。

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26. Hard and wear-resistant titanium nitride coatings were deposited by pulsed high energy density plasma technique on silicon nitride ceramic cutting tools at ambient temperature.

用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。

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27. Silicon nitride can be used to grow quantum well for obtaining blue laser by dopanting.

氮化硅可以通过适当掺杂引入杂质能级,用于制造量子阱获得蓝光激光。

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28. Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.

氮化硅、二氧化硅双层透明膜可用作硅PIN光电探测器抗反射膜。

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29. Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.

氮化硅、二氧化硅双层透明膜可用作硅PIN光电探测器抗反射膜。

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silicon nitride

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