photoresist
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n.
光致抗蚀剂；感光性树脂；光刻胶；光阻材料
英英释义
Photoresist
A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface.
以上来源于:Wikipedia
双语例句
用作名词(n.)
The groove width is reduced by employing a slope-etching process to form the photoresist pattern.
通过采用倾斜蚀刻工艺形成光致抗蚀剂图案，从而减小了凹槽的宽度。
A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed.
公开了从半导体基底上去除光致抗蚀剂或者光致抗蚀残留物的一种方法。
Thereafter, the patterned photoresist layer is removed.
此后，移除图案化光刻胶层。
Rectangular photoresist gratings can be fabricated by taking advantage of the nonlinearity of photoresist.
利用光刻胶的非线性效应可以制作出了矩形的全息光栅。
权威例句
PhotoresistCharacterization of positive photoresist
SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography
The manufacture of microlenses by melting photoresist
Micromachining applications of a high resolution ultrathick photoresist
High-aspect-ratio, ultrathick, negative-tone near-uv photoresist for MEMS applications
High-aspect-ratio, ultrathick, negative-tone near-uv photoresist for MEMS applications
Greiner, C.: SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography. J. Micromech. Microeng. 17, R81-R95
High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS
Fabrication of continuous-relief micro-optical elements by direct laser writing in photoresist
1. Photoresist coating preparation and baking; Thin film preparation.
光刻胶的旋涂与烘烤，薄膜材料制备。
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2. Exposure dose should be changed with the thickness of SU-8 photoresist.
根据SU - 8胶的厚度确定曝光剂量的大小。
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3. But this photoresist was then peeled off, leaving only a pure metal on metal bond.
但是这种光刻胶会被剥离，仅留下金属结合。
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4. The method on profile - control of micro - optic element in photoresist was presented.
介绍了连续微光学元件在光刻胶上的面形控制方法。
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5. Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
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6. This paper researches the influence of resin and wetting agent for the property of photoresist.
本论文研究了光阻剂中分别增加环氧树脂和润湿剂对其性能的影响。
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7. A small undesired hole in an oxide opaque region of a mask or reticle or in a photoresist layer.
氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。
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8. With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.
利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。
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9. Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
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10. Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.
飞秒激光su8负性光刻胶双光子聚合工艺研究。
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11. That so-called "cold welding" process did make use of a temporary adhesive, a substance known as a photoresist.
这种名叫“冷焊”的工艺使用的是临时粘合剂，一种叫做光刻胶的物质。
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12. Therefore, novel models for thick chemically amplified photoresist which fit well characters of SU-8 resist is set up.
因而这篇文章包括了我们在厚的化学放大胶光刻模型方面的努力，这些新的模型适用于SU-8胶。
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13. Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.
在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。
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14. Image reversal of S - 1400 series photoresist from positive to negative has been realized by added proper imidazole in it.
本文阐术了在S-1400正胶中加入适量咪唑，使正胶不仅具有原来特性，而且经一定工艺处理后还具有负胶的功能。
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15. The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.
结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。
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16. Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.
同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
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17. The experimental studies on the propagation characteristics of modes in the photoresist-glass planar optical waveguides are reported.
本文报导了负胶-玻璃复合平面光波导传播特性的实验研究。
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18. The process of SU-8 photoresist lithography is researched, and the influence of steps like coating and soft-bake on the lithography is studied.
初步研究了SU-8胶的光刻工艺流程，讨论了涂胶、前烘等各个步骤对光刻结果的影响。
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19. The effects of the photoresist film overlays on the propagation of modes in glass planar optical waveguides by silver-ion exchange are measured.
测量并归纳了负胶介质薄层对银离子交换玻璃平面波导传播特性影响的实验趋势。
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20. Therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.
对常压射频冷等离子体去除光刻胶的研究具有重要的学术意义和实用价值。
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21. The results indicate that the technology using aluminum as the mask is superior to that using the thick photoresist as the mask in AWG fabrication.
结果表明，在AWG器件制作工艺上，铝掩模技术明显优于厚胶掩模技术。
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22. The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.
研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。
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23. The process was controllable and could be applied to strip the photoresist residual of diffractive optical element fabricated on the thick substrate.
该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。
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24. No back plate growing method is to electroform metal microstructure on the metal substrate directly by low-cost UV-LIGA technology based on SU-8 photoresist.
无背板生长法是利用SU - 8光刻胶，通过低成本的UV -LIGA技术，直接在金属基板上电铸镍图形来实现的。
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25. Abstract: the influence of different post exposure bake (PEB) temperature on thermal swelling and the internal stresses of SU-8 photoresist were investigated.
摘要：对不同后烘温度条件下，SU - 8胶在电铸液中的热溶胀性及胶层的内应力大小进行了研究。
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26. We developed a non silicon surface micro machining process with two or three mask electroplating layers and using polyimide or photoresist as sacrificial layers.
我们研制的非硅表面微机械工艺采用两次或三次掩模电镀层，聚酰亚胺和光刻胶分别作为底层和第二、第三层的牺牲层。
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27. This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
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28. After removing the photoresist, other machines can fill those trenches with various materials, such as copper or aluminum, that comprise the components of the processor.
去除光阻剂以后，其他机器会在蚀刻痕迹中填入各种各样的材料，如铜或铝，它们是构成处理器的组件之一。
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29. After removing the photoresist, other machines can fill those trenches with various materials, such as copper or aluminum, that comprise the components of the processor.
去除光阻剂以后，其他机器会在蚀刻痕迹中填入各种各样的材料，如铜或铝，它们是构成处理器的组件之一。
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photoresist
