photoluminescence
n.
光致发光，光激发光；
英英释义
Photoluminescence
Photoluminescence (abbreviated as PL) describes the phenomenon of light emission from any form of matter after the absorption of photons (electromagnetic radiation). It is one of many forms of luminescence (light emission) and is initiated by photoexcitation (excitation by photons), hence the prefix photo-.
以上来源于:Wikipedia
双语例句
用作名词(n.)
Photoluminescence that persists for an extremely short time after excitation.
受激后持续时间很短的光致发光。
The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.
光致发光过程就是高能量光子照射到晶体上之后，晶体所产生的电子一空穴对的辐射复合过程。
权威例句
Emerging photoluminescence in monolayer MoS2.Control of photoluminescence properties of CdSe nanocrystals in growth
Efficient Photoluminescence and Electroluminescence from a Soluble Polyfluorene
Auger recombination in InGaN measured by photoluminescence
Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires
Quantum-sized carbon dots for bright and colorful photoluminescence
Quantum-sized carbon dots for bright and colorful photoluminescence.
An improved experimental determination of external photoluminescence quantum efficiency
Qu, L and Peng, X. Control of photoluminescence properties of CdSe nanocrystals in growth. J Am Chem Soc 124: 2049-2055
Charge separation and transport in conjugated-polymer/semiconductor-nanocrystal composites studied by photoluminescence quenching an...
1. The paper presents recent advances in the research on mechanism and properties of PS photoluminescence.
本文介绍了PS的光致发光机理与特性研究的一些最新进展。
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2. Recent research on photoluminescence of porous silicon(PS)has be- come a new hot spot in material science.
目前关于多孔硅（PS）的光致发光研究已成为材料科学中的一个新的热点。
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3. This paper introduces ultimate principles of self organized growth of nanometer quantum dots, self organized growth mechanism of various quantum dots, and their photoluminescence properties.
文中主要介绍了量子点自组织生长的基本原理、几种不同类型量子点的自组织生长及其光致发光特性。
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4. Photoluminescence test results show that the superlattice has preferable luminescence property and a yellow luminescence is found.
光致发光测试分析表明，超晶格有很好的发光性能，并发现存在黄带发光。
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5. The influences of surface passivation of photoluminescence and electroluminescence properties of porous silicon have been presented.
报道多孔硅的表面钝化对其光致发光和电致发光的影响。
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6. The photoluminescence of porous silicon (PS) can be improved by coated with organic film.
多孔硅与有机材料复合可以改善多孔硅的光致发光特性。
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7. This trick of stimulating quantum dots using light in order to get them to emit light of their own is called photoluminescence.
这种刺激利用光源的量子点以达到释放自我光彩的绝技叫做“光激发光”。
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8. Photoluminescence excitation (PLE) spectra were also studied and the light emission mechanisms are briefly discussed.
还研究了光致发光激发（PLE）谱并对发光机制进行了探讨。
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9. The photophysical process of photoluminescence of the complexes was discussed more fully by UV spectra and fluorescence spectra.
通过紫外光谱与荧光光谱的测定，较充分地研究了稀土高分子配合物光致发光的光物理过程。
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10. X ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) are used to analyze the synthesized GaN nanorods.
用X射线衍射（XRD）、扫描电镜（SEM）、高分辨率透射电镜（HRTEM）和光致发光光谱（PL）对生成的产物进行了分析。
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11. The special glaze composition and sintering process attained is suitable to the production of photoluminescence glaze.
探索出的特殊配方和制备工艺，适合于光致发光釉的生产。
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12. Recently extensive interest has been focused upon the Main Group chalcogenidometalates due to their promising photoconductivity, photoluminescence and nonlinear optical properties.
由于在光电导体、光致发光、非线性光学等方面广阔的应用前景，主族金属硫属化合物的研究受到人们的重视。
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13. The samples were characterized by X-ray diffraction (XRD), Scanning electronic microscope (SEM), photoluminescence (PL) and X-ray excited luminescence (XEL) spectra.
分别以X-射线衍射（XRD）、扫描电子显微镜（SEM）、光致发光（PL）光谱及X-射线激发的发光（XEL）光谱对样品进行了表征。
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14. The spectra analysis showed that porous silicon is the material with nano crystal structure, and photoluminescence of PS can be explained by the model of quantum restriction effect.
对不同实验条件下所得到的多孔硅的拉曼光谱进行了分析，确认了多孔硅是具有纳米晶结构特征的材料，肯定了量子限制效应在多孔硅光致发光中的作用。
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15. The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
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16. The structure, surface morphology and the optical properties were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL).
用X射线衍射（XRD）、扫描电镜（SEM）、荧光光谱（PL）对样品进行结构、形貌和发光特性的分析。
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17. Their thermal stability, photoluminescence(PL), electro- luminescence(EL), and the relationship between structure and properties were also studied.
并对它们的热稳定性、光致发光、电致发光以及聚合物结构和发光性能进行了系统研究。
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18. It shows that the collection is superposition of Raman and photoluminescence spectrum.
结果表明，所采集到的是拉曼光谱和光致发光光谱的叠加。
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19. The paper reviews the significance, the mechanism of photoluminescence, the techniques to prepare Si nanocrystals in SiO_x thin films. The future development is also discussed.
本文阐述了纳米硅- 氧化硅光致发光的意义和机理，还分别介绍了目前各种用于制备纳米硅-氧化硅的方法和研究现状，最后讨论了今后的发展趋势。
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20. Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。
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21. The sub-structure in absorption spectrum was analyzed by means of photoluminescence excitation (PLE) spectra.
用光致发光激发（PLE）谱分析吸收谱的亚结构。
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22. Before copper doping, only one photoluminescence band is detected, and two luminescence bands are observed after the copper doping.
而掺过铜的多孔硅，其光致发光谱出现两个发光带，其中能量较低的发光带随主发光带而变化。
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23. The safety of long afterglow photoluminescence materials is discussed in this paper.
本文对光致发光材料的安全问题进行了初步探讨。
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24. A comparative study of photoluminescence( PL) and photoluminescence excitation( PLE) for porous Si and Si oxide, both emitting blue light, is reported.
对发射蓝光的多孔硅和氧化硅样品分别作了光致发光谱和光致发光激发光谱的对比研究。
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25. Compared to silicon material, porous silicon has obvious characteristic of visible photoluminescence, and its principle can be explained by quantum confinement model.
多孔硅与硅材料相比，有明显的可见光致发光特性，其原理可用量子限制模型给予解释。
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26. The FWHM of photoluminescence(PL) peaks becomes large owing to different shape and size between the first layer and the other four layers of QDs.
由于第一层量子点与其他四层量子点的大小、形状不同，导致量子点光致发光峰的半高宽增加。
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27. The testing result of photoluminescence spectra at room temperature shows that all the samples have two emission bands, that is, UV emission band near the band-edge and visible emission band.
室温下样品光致发光光谱的测量结果表明：所有的样品均有两个发射带，即近带边紫外发射和可见发射带。
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28. By high optical efficiency photoluminescence and mapping, emission bands of point defects in different Ge-doped concentrations were analyzed.
通过高光学效率的光致发光及高空间分辨率像谱技术，对不同掺锗浓度样品中点缺陷发光带进行分析。
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29. By high optical efficiency photoluminescence and mapping, emission bands of point defects in different Ge-doped concentrations were analyzed.
通过高光学效率的光致发光及高空间分辨率像谱技术，对不同掺锗浓度样品中点缺陷发光带进行分析。
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30. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.
光致发光过程就是高能量光子照射到晶体上之后，晶体所产生的电子一空穴对的辐射复合过程。
-- 来源 -- 英汉 - 辞典例句
31. It shows that the collection is superposition of Raman and photoluminescence spectrum.
结果表明,所采集到的是拉曼光谱和光致发光光谱的叠加。
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32. photoluminescence powder
光致发光粉
-- 来源 -- 英汉 - 翻译参考[网络]
33. photoluminescence detector
光致发光探测器
-- 来源 -- 英汉 - 翻译参考[网络]
34. photoluminescence efficiency curve
光致发光效率曲线
-- 来源 -- 英汉 - 翻译参考[网络]
35. Based on the quantum confinement_ luminescence center model, t he relation between the inner electric field( IEF) and the photoluminescence( PL) character is calculated.
从量子限制发光中心模型出发,计算了纳米硅的光致发光(L)征与发光中心间的关系.
-- 来源 -- dict.cnki.net
photoluminescence
