FETS

英式音标：

美式音标：

词义：

释义

[医][=forced expiratory time in seconds]以秒表示的用力呼气时间；

用法：

权威例句

25 nm CMOS Omega FETs

Trapping effects in GaN and SiC microwave FETs

Methods of forming multi fin FETs using sacrificial fins and devices so formed

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

Analysis of the parasitic S/D resistance in multiple-gate FETs

On the Dynamic characteristics of Ferroelectric and Paraelectric FETs

Integration of organic FETs with organic photodiodes for a large area, flexible, and lightweight sheet image scanners

Record ON currents for FDSOI HK-MG n & p-type tunnel FETs bu using ultrathin strained SiGe body.

Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs

Network single-walled carbon nanotube-field effect transistors (SWNT-FETs) with increased Schottky contact area for highly sensitive...

造句：

1. Very likely you have burnt your FETs on car, time to change it.

很有可能你的FET已烧了， 最好验正后换掉。

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2. The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).

本发明涉及高性能三维(3d)场效应晶体管(FET)。

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3. Though the overall mission of FETs is to engage Afghan women, the female Marines are increasingly exposed.

尽管女兵队的主要任务是帮助阿富汗妇女，但在村庄巡逻中，女海军陆战队员暴露在火力中和交火的机会越来越多。

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4. The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.

通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。

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5. The power FETs are more and more widely used in radio-frequency power amplification in all-solid state transmitter.

场效应功放管在全固态发射机的射频功放中应用得越来越广泛。

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6. Based on his work experience, the author puts forward a method and operation procedure for replacing final power FETs for the colleagues' reference.

本文作者通过自己在工作中的摸索和积累，总结出了一套更换末级场效应功放管的方法和操作步骤，以供同行参考。

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7. As final power FETs are very expensive, the antistatic requirement is quite high in replacing damaged FETs. A misoperation would destroy FETs and cause loss.

由于末级场效应功放管价格昂贵，当管子损坏需要更换时，对防静电的要求很高，一旦操作不当就会损坏管子，造成损失。

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8. Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.

基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。

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9. Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.

基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。

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