jfet
abbr.
junction field-effect transistor 场效应晶体管接合，结型场效应晶体管；
英英释义
JFET
The junction gate field-effect transistor (JFET or JUGFET) is the simplest type of field-effect transistor. It can be used as an electronically-controlled switch or as a voltage-controlled resistance.
以上来源于:Wikipedia
权威例句
Fin-JFETA SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
Femto-Joule, high-speed planar GaAs E-JFET logic
Femto-Joule, high-speed planar GaAs E-JFET logic
Nitrogen polar III-nitride heterojunction JFET
Trench-gated vertical combination JFET and MOSFET devices
The noise behavior of JFET transistors from room temperature down to 80 k
Design and Performance of a 200-kHz All-SiC JFET Current DC-Link Back-to-Back Converter
Fully integrated analog filters using bipolar-JFET technology [active fifth order Chebyshev low-pass realisation]
1. Cascade JFET constant current device is of very high dynamic impedance.
串级JFET恒流器件具有非常高的动态阻抗。
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2. The buffers can be a pair of JFET op amps or two electrometers with unity-gain outputs.
该缓冲器可以是一对JFET运算放大器或者是两个具有单位增益输出的静电计。
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3. When inputs to most JFET op amps exceed the common-mode range for the part, the output may reverse polarity.
当大部分JFET运放的输入超过它的共模范围时，输出可能发生极性翻转。
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4. This paper is going to analyze a control circuit to stabilize dynamically the electrical level in JFET back grid.
本文将分析一种用于对这种JFET背栅电平进行动态稳定控制的电路。
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5. JFET resistance, accumulation resistance, channel resistance and drift region resistance is the most important components of on-resistance.
JFET区电阻、沟道电阻、积累层电阻和漂移区电阻是导通电阻的四个最主要的组成部分。
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6. A method for approximately estimating the SPICE modelling parameters of JFET is presented, which is intended to be implemented on a automatic test system configured with GP—IB.
本文叙述应用具有GP-IB接口的自动测试系统对结型场效应管的SPICE模型参数进行测试的近似方法。
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7. Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.
本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。
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8. Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.
本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。
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jfet
